ELECTRONIC STRUCTURE OF BLACK PHOSPHORUS: TIGHT BINDING APPROACH.

被引：0

作者：

Takao, Yukihiro

Morita, Akira

机构：

来源：

Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics | 1980年 / 105卷 / 1-3期

关键词：

BAND STRUCTURE;

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摘要：

The energy bands of black phosphorus, which is a narrow gap semiconductor with a layer structure consisting of puckered layers, are calculated for the first time using the tight binding approximation. On the basis of the resulting band structure, the electronic properties of black phosphorus are discussed.

引用

页码：93 / 98