共 50 条
- [21] DETERMINATION OF THRESHOLD POWER FOR SEMICONDUCTOR MELTING DURING LASER ANNEALING. Electron Technology (Warsaw), 1985, 17 (3-4): : 25 - 33
- [23] LATTICE TEMPERATURE OF GAAS AND SI DURING PULSED LASER ANNEALING JOURNAL DE PHYSIQUE, 1983, 44 (NC-5): : 129 - 129
- [24] VARIATIONS IN THE FLOW STRESS AND RESISTIVITY OF POLYCRYSTALLINE ZIRCONIUM DURING ALTERNATING LOW-TEMPERATURE DEFORMATION AND ANNEALING. Physics of Metals and Metallography, 1979, 47 (05): : 148 - 152
- [26] ELECTRICAL BEHAVIOUR OF THERMALLY DIFFUSED SILICON SOLAR CELLS SUBMITTED TO RAPID ANNEALING. Applied Physics A: Solids and Surfaces, 1985, A 37 (04): : 221 - 224
- [27] Residual stresses due to high temperature annealing. Mathematical model and calculations RESIDUAL STRESSES VII, 2006, 524-525 : 355 - 360
- [28] Nanoscale charge nonuniformity on colloidal particles: Effects of dispersants and temperature annealing. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2003, 226 : U359 - U359
- [29] The removal of internal stress in 70 : 30 brass by low temperature annealing. JOURNAL OF THE INSTITUTE OF METALS, 1920, 23 : 225 - 245
- [30] Tribological properties of oriented polytetrafluoroethylene at room temperature and cryogenic temperature POLYMER ENGINEERING AND SCIENCE, 2022, 62 (12): : 3935 - 3944