Characteristics of polycrystalline silicon thin-film transistors with thin oxide/nitride gate structures

被引：0
|
作者：
Cheng, Huang-Chung [1 ]
Tai, Ya-Hsiang [1 ]
Feng, Ming-Shiann [1 ]
Wang, Jau-Jey [1 ]
机构：
[1] Natl Chiao Tung Univ, Hsinchu, Taiwan
来源：
| 1798年 / Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States卷 / 32期
关键词：
Display technologies - Gate dielectrics thermal oxides - Polycrystalline silicon thin-film transistors;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH THIN OXIDE NITRIDE GATE STRUCTURES
    CHENG, HC
    TAI, YH
    FENG, MS
    WANG, JJ
    OPTICAL ENGINEERING, 1993, 32 (08) : 1798 - 1802
  • [2] Subthreshold slope in polycrystalline silicon thin-film transistors and effect of the gate oxide on the subthreshold characteristics
    Dimitriadis, CA
    APPLIED PHYSICS LETTERS, 1995, 67 (25) : 3738 - 3740
  • [3] Influence of lateral crystallization on gate oxide in polycrystalline silicon thin-film transistors
    Kanga, Il-Suk
    Han, Shin-Hee
    Joo, Seung-Ki
    APPLIED PHYSICS LETTERS, 2007, 91 (22)
  • [4] A comparison of zinc oxide thin-film transistors on silicon oxide and silicon nitride gate dielectrics
    Carcia, P. F.
    McLean, R. S.
    Reilly, M. H.
    Crawford, M. K.
    Blanchard, E. N.
    Kattamis, A. Z.
    Wagner, S.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)
  • [5] Characteristics of Hot Hole Injection, Trapping, and Detrapping in Gate Oxide of Polycrystalline Silicon Thin-Film Transistors
    Kamakura, Yoshinari
    Himukashi, Takashi
    Tsuji, Hiroshi
    Taniguchi, Kenji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (02)
  • [6] POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    BROTHERTON, SD
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (06) : 721 - 738
  • [7] Reliability of low temperature polycrystalline silicon thin-film transistors with ultrathin gate oxide
    Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
    不详
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 7 A (4021-4027):
  • [8] Reliability of low temperature polycrystalline silicon thin-film transistors with ultrathin gate oxide
    Ueno, Hitoshi
    Sugawara, Yuta
    Yano, Hiroshi
    Hatayama, Tomoaki
    Uraoka, Yukiharu
    Fuyuki, Takashi
    Serikawa, Tadashi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (7A): : 4021 - 4027
  • [9] Polycrystalline silicon thin-film transistors
    Wagner, S
    Wu, M
    Min, BGR
    Cheng, IC
    POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE AREA ELECTRONICS, 2001, 80-81 : 325 - 336
  • [10] Gate bias instability in hydrogenated polycrystalline silicon thin-film transistors
    Dimitriadis, CA
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (06) : 3624 - 3628
12345