NbN/MgO/NbN Josephson junctions for integrated circuits

被引：0

作者：

Aoyagi, Masahiro ^{[1
]}

Nakagawa, Hiroshi ^{[1
]}

Kurosawa, Itaru ^{[1
]}

Takada, Susumu ^{[1
]}

机构：

[1] Electrotechnical Lab, Ibaraki, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 6 A期

关键词：

Critical currents - Niobium nitride;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Characteristics of the NbN/MgO/NbN Josephson junction for integrated circuits have been investigated. The deposition process of the MgO film for the tunnel barrier was systematically investigated to obtain the controllability of the Josephson critical current density. The reproducibility of the Josephson critical current density was improved to ±28% with the critical current density of 610 A/cm2 and ±20% with the critical current density of 16 kA/cm2. The uniformity of the Josephson critical current density across a 3 cm-square area on the substrate was improved to ±12% with the critical current density of 650 A/cm2.

引用

页码：1778 / 1783