Capacitance of the p-n Abrupt Barrier Junction in the Presence of Voltage Approaching the Diffusion Potential.

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作者：

Baranowski, Jerzy

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Elektronika Warszawa | 1982年 / 23卷 / 06期

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摘要：

SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER

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页码：25 / 33

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