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- [2] Growth and characterization of PbSe and Pb1-xSnxSe layers on Si (100) INFRARED APPLICATIONS OF SEMICONDUCTORS II, 1998, 484 : 371 - 376
- [3] Growth and characterization of PbSe and Pb1-xSnxSe layers on Si (100) SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II, 1997, 487 : 651 - 656
- [4] FABRICATION AND PROPERTIES OF PBSE/PB1-XSNXSE DH-LASER STRUCTURES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 782 - 783
- [6] CARRIER-DENSITY DEPENDENCE OF THE CYCLOTRON MASS IN PBSE AND PB1-XSNXSE ALLOYS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (11): : 1325 - 1328
- [9] ELECTRON-STRUCTURE OF INTRINSIC LATTICE-DEFECTS IN PBSE AND PB1-XSNXSE CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (08): : 934 - 935