MECHANISM OF SELF-DIFFUSION IN GERMANIUM AND SILICON.

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作者：
Rudoi, N.E.
Panteleev, V.A.
Okulich, V.I.
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Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1974年 / 7卷 / 12期
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摘要：
Self diffusion phenomena in Ge and Si are considered assuming that a semiconductor contains defects whose concentration is N and whose energy of formation is W and that the self diffusion coefficient is proportional to the concentration of the defect under consideration.
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页码：1558 / 1559
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