HOT-ELECTRON EFFECTS ON CHANNEL THERMAL NOISE IN FINE-LINE NMOS FIELD-EFFECT TRANSISTORS.

被引：0
|
作者：
Jindal, R.P. [1 ]
机构：
[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
来源：
IEEE Transactions on Electron Devices | 1986年 / ED-33卷 / 09期
关键词：
ELECTRONS;
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学科分类号：
摘要：
Submicrometer NMOSFETs exhibit excess channel thermal noise. This excess noise increases with increasing drain-to-source voltage and with decreasing channel length. A strong correlation between high electric field and excess noise strongly suggests that hot electrons are being responsible for this excess noise.
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页码：1395 / 1397
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