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- [1] SURFACE PASSIVATION OF IN0.52AL0.48AS USING (NH4)2SX AND P2S5/(NH4)2S JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (3A): : 1248 - 1252
- [4] Passivation of GaAs using P2S5/(NH4)2S+Se and (NH4)2S+Se JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (03): : 874 - 878
- [9] Surface treatment of GaN and InN using (NH4)2Sx 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2031 - 2034
- [10] A MODEL TO EXPLAIN THE EFFECTIVE PASSIVATION OF THE GAAS SURFACE BY (NH4)2SX TREATMENT JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12): : L2367 - L2369