PHOTOLUMINESCENCE EXCITATION STUDIES OF a-SiNx:H ALLOYS.

被引：24

作者：

Jackson, W.A. ^{[1
]}

Searle, T.M. ^{[1
]}

Austin, I.G. ^{[1
]}

Gibson, R.A. ^{[1
]}

机构：

[1] Univ of Sheffield, Dep of Physics,, Sheffield, Engl, Univ of Sheffield, Dep of Physics, Sheffield, Engl

来源：

Journal of Non-Crystalline Solids | 1985年 / 77-78 Dec II卷

关键词：

HYDROGEN INORGANIC COMPOUNDS - PHOTOLUMINESCENCE - SEMICONDUCTING SILICON COMPOUNDS - Hydrogenation;

D O I：

10.1016/0022-3093(85)90808-7

中图分类号：

学科分类号：

摘要：

Below gap excitation is shown to red shift the PL peak by greater than 14% of the gap in SiN//x alloys. In addition it produces a marked weakening of its temperature dependence.

引用

页码：909 / 912