High resolution x-ray diffraction analysis of Si/GaAs superlattices

被引：0
|
作者：
Gillespie, H.J.
Wade, J.K.
Crook, G.E.
Matyi, R.J.
机构：
来源：
| 1600年 / 73期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Elastic strains in GaAs/AlAs quantum dots studied by high resolution x-ray diffraction
    Masaryk Univ, Brno, Czech Republic
    Solid State Electron, 1-8 (373-377):
  • [42] Elastic strains in GaAs/AlAs quantum dots studied by high resolution X-ray diffraction
    Holy, V
    Darhuber, AA
    Bauer, G
    Wang, PD
    Song, YP
    Torres, CMS
    Holland, MC
    SOLID-STATE ELECTRONICS, 1996, 40 (1-8) : 373 - 377
  • [43] InGaAs/GaAs ultrathin strained quantum well characterization by high resolution X-ray diffraction
    Xiamen Univ, Xiamen, China
    Pan Tao Ti Hsueh Pao, 3 (170-176):
  • [44] Quantitative x-ray diffraction from superlattices
    Fullerton, E.E.
    Schuller, I.K.
    Bruynseraede, Y.
    MRS Bulletin, 1992, 12 (12)
  • [45] High-resolution x-ray diffraction investigations on epitaxially grown ZnSe/GaAs layers
    J Phys D, 4A (A120):
  • [46] HIGH RESOLUTION X-RAY DIFFRACTION STUDY OF GaAs COILED MEMBRANES PRODUCED BY MICROMACHINING.
    Lal, Krishan
    Goswami, Niranjana
    Miao, J.
    Hartnagel, H. L.
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 1999, 55 : 220 - 221
  • [47] High-resolution X-ray diffraction and electron microscopy study of porous GaAs substrates
    Lomov, Andrey A.
    Grym, Jan
    Nohavica, Dusan
    Orehov, Andrey S.
    Vasiliev, Alexander L.
    Novikov, Dmitri V.
    INTERNATIONAL CONFERENCE MICRO- AND NANO-ELECTRONICS 2012, 2012, 8700
  • [48] High resolution X-ray diffraction and X-ray topography study of GaN on sapphire
    Chaudhuri, J
    Ng, MH
    Koleske, DD
    Wickenden, AE
    Henry, RL
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 64 (02): : 99 - 106
  • [49] High resolution X-ray diffraction and X-ray topography study of GaN on sapphire
    Wichita State Univ, Wichita, United States
    Mater Sci Eng B Solid State Adv Technol, 2 (99-106):
  • [50] High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate
    Hryhorii Stanchu
    Vasyl Kladko
    Andrian V Kuchuk
    Nadiia Safriuk
    Alexander Belyaev
    Aleksandra Wierzbicka
    Marta Sobanska
    Kamil Klosek
    Zbigniew R Zytkiewicz
    Nanoscale Research Letters, 2015, 10
12345