INFLUENCE OF UNIAXIAL DEFORMATION ON THE CONDUCTIVITY OF COMPENSATED p-TYPE Ge AND ON THE CHANGE IN THE CONDUCTIVITY DUE TO MICROWAVE RADIATION.

被引：0

作者：

Vavilov, V.S.

Kazanskii, A.G.

Koshelev, O.G.

机构：

来源：

Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1975年 / 8卷 / 12期

关键词：

Compendex;

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摘要：

SEMICONDUCTING GERMANIUM

引用

页码：1557 / 1558

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[1] INFLUENCE OF UNIAXIAL DEFORMATION ON CONDUCTIVITY OF COMPENSATED P-TYPE GE AND ON CHANGE IN CONDUCTIVITY DUE TO MICROWAVE RADIATION
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KAZANSKII, AG
KOSHELEV, OG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (12): : 1557 - 1558
[2] INFLUENCE OF MICROWAVE RADIATION ON CONDUCTIVITY OF COMPENSATED P-TYPE GE AT LIQUID-HELIUM TEMPERATURES
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[3] TEMPERATURE-DEPENDENCE OF CHANGE IN CONDUCTIVITY DUE TO ABSORPTION OF MICROWAVE RADIATION IN COMPENSATED PARA-TYPE GE
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[4] INFLUENCE OF DEFORMATION ON CONDUCTIVITY AND PHOTOCONDUCTIVITY OF P-TYPE CDTE
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[6] INFLUENCE OF LIGHT HOLES ON ANISOTROPY OF CONDUCTIVITY OF P-TYPE GE
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[7] CONDUCTIVITY OF COMPENSATED MODERATELY DOPED p-TYPE Ge AT LOW AND ULTRALOW TEMPERATURES.
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[8] EFFECT OF MICROWAVE RADIATION ON ELECTRIC CONDUCTIVITY OF P-TYPE INDIUM ANTIMONIDE
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[9] MODIFICATION OF THE EMISSION-SPECTRUM OF A P-TYPE GE LASER DUE TO UNIAXIAL DEFORMATION
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[10] INFLUENCE OF MICROWAVES ON CONDUCTIVITY OF COMPENSATED P-TYPE GERMANIUM AT LIQUID-HELIUM TEMPERATURES
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