Experimental analysis of temperature dependence in 1.3-μm AlGaInAs-InP strained MQW lasers

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作者：
Higashi, Toshio [1 ,2 ,4 ,5 ,6 ]
Sweeney, Stephen J. [1 ]
Phillips, Alistair F. [1 ]
Adams, Alfred R. [1 ]
O'Reilly, Eoin P. [1 ,7 ,8 ,9 ,10 ]
Uchida, Toru [3 ,5 ,11 ]
Fujii, Takuya [3 ,5 ,12 ,13 ,14 ]
机构：
[1] University of Surrey, Guildford, Surrey, GU2 5XH, United Kingdom
[2] Optical Semiconduct. Device Dept., Fujitsu Quantum Devices Ltd., Yamanashi-Ken 409-3883, Japan
[3] Fujitsu Laboratories Ltd., Atsugi 243-0167, Japan
[4] Kanazawa University, Ishikawa, Japan
[5] Fujitsu Laboratories Ltd., Atsugi, Japan
[6] University of Surrey, Guildford, United Kingdom
[7] Trinity College, Dublin, Ireland
[8] Trinity College, Cambridge, United Kingdom
[9] Department of Physics, University of Surrey, Guildford, United Kingdom
[10] Fraunhofer Inst. Angew. F., Freiburg, Germany
[11] Nagoya University, Nagoya, Japan
[12] Shinshu University, Matsumoto, Japan
[13] Osaka University, Osaka, Japan
[14] Fujitsu Quantum Devices Ltd., Yamanashi, Japan
来源：
IEEE Journal on Selected Topics in Quantum Electronics | / 5卷 / 03期
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页码：413 / 419
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