Experimental analysis of temperature dependence in 1.3-μm AlGaInAs-InP strained MQW lasers

被引：0
|
作者：
Higashi, Toshio [1 ,2 ,4 ,5 ,6 ]
Sweeney, Stephen J. [1 ]
Phillips, Alistair F. [1 ]
Adams, Alfred R. [1 ]
O'Reilly, Eoin P. [1 ,7 ,8 ,9 ,10 ]
Uchida, Toru [3 ,5 ,11 ]
Fujii, Takuya [3 ,5 ,12 ,13 ,14 ]
机构：
[1] University of Surrey, Guildford, Surrey, GU2 5XH, United Kingdom
[2] Optical Semiconduct. Device Dept., Fujitsu Quantum Devices Ltd., Yamanashi-Ken 409-3883, Japan
[3] Fujitsu Laboratories Ltd., Atsugi 243-0167, Japan
[4] Kanazawa University, Ishikawa, Japan
[5] Fujitsu Laboratories Ltd., Atsugi, Japan
[6] University of Surrey, Guildford, United Kingdom
[7] Trinity College, Dublin, Ireland
[8] Trinity College, Cambridge, United Kingdom
[9] Department of Physics, University of Surrey, Guildford, United Kingdom
[10] Fraunhofer Inst. Angew. F., Freiburg, Germany
[11] Nagoya University, Nagoya, Japan
[12] Shinshu University, Matsumoto, Japan
[13] Osaka University, Osaka, Japan
[14] Fujitsu Quantum Devices Ltd., Yamanashi, Japan
来源：
IEEE Journal on Selected Topics in Quantum Electronics | / 5卷 / 03期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：413 / 419
相关论文
共 50 条
  • [21] Strained 1.3μm MQW AlGaInAs lasers grown by digital alloy MBE
    Springthorpe, AJ
    Garanzotis, T
    Paddon, P
    Pakulski, G
    White, KI
    ELECTRONICS LETTERS, 2000, 36 (12) : 1031 - 1032
  • [22] MOVPE growth of AlGaInAs-InP highly tensile-strained MQWs for 1.3 μm low-threshold lasers
    Decobert, J
    Lagay, N
    Cuisin, C
    Dagens, B
    Thedrez, B
    Laruelle, F
    JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) : 543 - 548
  • [23] Improvement of Antistatic Discharge Performance of 1.3-μm AlGaInAs/InP Semiconductor Lasers
    Dai, Mingjun
    Lv, Hui
    Niu, Chao
    Du, Yunlong
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2025, 37 (03) : 129 - 132
  • [24] Highly uniform operation of high-performance 1.3-μm AlGaInAs-InP monolithic laser arrays
    Lin, CC
    Wu, MC
    Liao, HH
    Wang, WH
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (05) : 590 - 597
  • [25] High performance phosphorus-free 1.3 μm AlGaInAs InP MQW lasers
    Pan, JW
    Chen, MH
    Chyi, JI
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 923 - 926
  • [26] High performance phosphorus-free 1.3 μm AlGaInAs/InP MQW lasers
    Pan, Jen-Wei
    Chen, Ming-Hong
    Chyi, Jen-Inn
    Journal of Crystal Growth, 1999, 201 : 923 - 926
  • [27] Low-cost and high-performance 1.3-μm AlGaInAs-InP uncooled laser diodes
    Peng, Te-Chin
    Huang, Yun-Hsun
    Yang, Chih-Chao
    Huang, Kun-Fu
    Lee, Feng-Ming
    Hu, Chih-Wei
    Wu, Meng-Chyi
    Ho, Chong-Long
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (9-12) : 1380 - 1382
  • [28] 1.3 μm strained MQW AlGaInAs and InGaAsP ridge-waveguide lasers a comparative study
    Silva, MTC
    Sih, JP
    Chou, TM
    Kirk, JK
    Evans, GA
    Butler, JK
    1999 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, PROCEEDINGS, VOLS 1 & 2: WIRELESS AND PHOTONICS BUILDING THE GLOBAL INFOWAYS, 1999, : 10 - 12
  • [29] 1.3-μm AlGaInAs buried-heterostructure lasers
    Takemasa, K
    Kubota, M
    Munakata, T
    Wada, H
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (08) : 949 - 951
  • [30] 1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes
    王定理
    周宁
    张军
    刘宇
    祝宁华
    李林松
    Chinese Optics Letters, 2005, (08) : 466 - 468
12345