High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition

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Department of Electrical Engineering, University of Utah, Salt Lake City, UT 84112, United States ^{[1
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IEEE J. Quantum Electron. | / 10卷 / 1535-1541期

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[1] High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition
Yang, GW
Hwu, RJ
Xu, ZT
Ma, XY
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (10) : 1535 - 1541
[2] 980 nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition
Chinese Acad of Sciences, Beijing, China
Electron Lett, 13 (1312-1313):
[3] 980nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition
Yang, GW
Xu, ZT
Ma, XY
Xu, JY
Zhang, JM
Chen, LH
ELECTRONICS LETTERS, 1998, 34 (13) : 1312 - 1313
[4] Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs
Yang, GW
Xu, ZT
Xu, JY
Ma, XY
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SEMICONDUCTOR LASERS III, 1998, 3547 : 64 - 70
[5] High-performance 1200-nm InGaAs and 1300-nm InGaAsN quantum-well lasers by metalorganic chemical vapor deposition
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[6] Physics and characteristics of high performance 1200 nm InGaAs and 1300-1400 nm InGaAsN quantum well lasers obtained by metal-organic chemical vapour deposition
Tansu, N
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