High-performance poly-Si thin-film transistors with excimer-laser annealed silicon-nitride gate

被引：0

作者：

Shimizu, Kazuhiro ^{[1
]}

Nakamura, Kyoutarou ^{[1
]}

Higashimoto, Masayuki ^{[1
]}

Sugiura, Osamu ^{[1
]}

Matsumura, Masakiyo ^{[1
]}

机构：

[1] Tokyo Inst of Technology, Tokyo, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 1 B期

关键词：

Annealing - Electric properties - Electron transport properties - Etching - Excimer lasers - Gates (transistor) - Semiconducting silicon compounds - Thin films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We report, for the first time, that ArF excimer laser annealing can improve silicon-nitride film properties. It is shown that the 15-nm-thick top region of the laser preannealed film had a lower hydrogen content and a much lower etching rate than the as-deposited film. The laser preannealed film is very useful as the gate insulator of high-performance bottom-gate thin-film transistors fabricated with the laser-recrystallized poly-Si film. The field-effect mobility of electrons was as high as 200 cm2/V&middots, while the mobility was as low as 40 cm2/V&middots without preannealing the silicon-nitride film.

引用

页码：452 / 457

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