TUNNELING COMPONENT IN POLYSILICON SELF-ALIGNED BIPOLAR TRANSISTORS.

被引：0
|
作者：
Hackbarth, E. [1 ]
Li, G.P. [1 ]
Chen, T.C. [1 ]
机构：
[1] IBM, T. J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM, T. J. Watson Research Cent, Yorktown Heights, NY, USA
来源：
IEEE Transactions on Electron Devices | 1986年 / ED-33卷 / 11期
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摘要：
TRANSISTORS, BIPOLAR
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