MECHANISM OF THE CHANGE OF THE PSEUDOGAP IN MOLTEN SEMICONDUCTORS ON GOING FROM SEMICONDUCTING TO METALLIC CONDUCTION.

The presence of a transition from semiconducting to metallic conduction at high temperature is demonstrated by the results of an investigation of the temperature dependence of the intrinsic absorption edge of the dc electric conductivity of melts of As//2Se//3, AsSe, and Ge//0//. //0//8Se//0//. //9//2. A quantitative interpretation is proposed for the change of the width of the pseudogap with changing temperature in a wide temperature range. Below the critical semiconductor-metal transition temperature, the temperature dependence of the pseudogap is described with the aid of the electron-phonon interaction mechanism. The behavior of the pseudogap in the region of the semiconductor-metal transition is described.