X-ray investigations of MBE-grown heteroepitaxial SiC layers on 6H-SiC substrates

被引：0

作者：

Bauer, A. ^{[1
]}

Kräusslich, J. ^{[1
]}

Köcher, B. ^{[1
]}

Goetz, K. ^{[1
]}

Fissel, A. ^{[2
]}

Richter, W. ^{[2
]}

机构：

[1] Institute of Optics and Quantumelectronics, Friedrich Schiller University of Jena, Max-Wien-Platz 1, D-07743 Jena, Germany

[2] Institute of Solid State Physics, Friedrich Schiller University of Jena, Max-Wien-Platz 1, D-07743 Jena, Germany

来源：

Materials Science and Engineering B: Solid-State Materials for Advanced Technology | 1999年 / 61卷

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摘要：

引用

页码：179 / 182

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