X-ray investigations of MBE-grown heteroepitaxial SiC layers on 6H-SiC substrates

被引：0
作者：
Bauer, A. [1 ]
Kräusslich, J. [1 ]
Köcher, B. [1 ]
Goetz, K. [1 ]
Fissel, A. [2 ]
Richter, W. [2 ]
机构：
[1] Institute of Optics and Quantumelectronics, Friedrich Schiller University of Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
[2] Institute of Solid State Physics, Friedrich Schiller University of Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
来源：
Materials Science and Engineering B: Solid-State Materials for Advanced Technology | 1999年 / 61卷
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页码：179 / 182
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