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Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures
被引：199
作者：
Li, E. Herbert
[1
]
机构：
[1] Division of Applied Sciences, Harvard University, Cambridge, MA 02138-2901, United States
关键词：
The author is supported by the RGC Research Grants of Hong Kong and the CRCG Grants of the University of Hong Kong. The author would also like to acknowledge the technical support of Vincent Leung of IBM (Hong Kong);
Jeanny Chan of Proactive Technology;
Hong Kong;
and Donna Tang of Queen's University;
Canada. He also appreciates the hospitality provided by Professor Eric Mazur during his substantial leave;
D O I：
10.1016/S1386-9477(99)00262-3
中图分类号：
学科分类号：
摘要：
207
引用
收藏
页码：215 / 273
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