Growth and properties of InGaN and AlInGaN thin films on (0001) Sapphire

被引：0

作者：

Electrical Engineering Department, North Carolina State University, United States ^{[1
]}

机构：

来源：

MRS Internet J. Nitride Semicond. Res. | / 6d期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[41] Textured ZnO thin films on (0001) sapphire produced by chemical solution deposition [J].

Wessler, B ;

Lange, FF ;

Mader, W .

JOURNAL OF MATERIALS RESEARCH, 2002, 17 (07) :1644-1650

[42] Heteroepitaxial growth and the effect of strain on the luminescent properties of GaN films on (112¯0) and (0001) sapphire substrates [J].

Amano, Hiroshi ;

Hiramatsu, Kazumasa ;

Akasaki, Isamu .

Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 (08)

[43] Radio frequency-molecular beam epitaxial growth of InN epitaxial films on (0001)sapphire and their properties [J].

Araki, T ;

Saito, Y ;

Yamaguchi, T ;

Kurouchi, M ;

Nanishi, Y ;

Naoi, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (04) :2139-2143

[44] Growth of highly textured barium ferrite thin films on sapphire and their magnetic properties [J].

Zhang, Wanli ;

Zhang, Wenxu ;

Lu, Zhengxin ;

Li, Fang ;

Peng, Bin .

THIN SOLID FILMS, 2012, 526 :237-240

[45] Epitaxial growth of zinc oxide thin films on epi-GaN/sapphire (0001) by sol-gel technique [J].

Sagar, Parmod ;

Kumar, Manoj ;

Mehra, R. M. ;

Okada, H. ;

Wakahara, Akihiro ;

Yoshida, Akira .

THIN SOLID FILMS, 2007, 515 (7-8) :3330-3334

[46] In situ conductance measurements of copper phthalocyanine thin film growth on sapphire [0001] [J].

Murdey, Richard ;

Sato, Naoki .

JOURNAL OF CHEMICAL PHYSICS, 2011, 134 (23)

[47] Effects of growth pressure on the characteristics of the β-Ga2O3 thin films deposited on (0001) sapphire substrates [J].

Zhang, Tao ;

Li, Yifan ;

Feng, Qian ;

Zhang, Yachao ;

Ning, Jing ;

Zhang, Chunfu ;

Zhang, Jincheng ;

Hao, Yue .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 123

[48] Comparisons of structural and optical properties of ZnO films grown on (0001) sapphire and GaN/(0001) sapphire template by atmospheric-pressure MOCVD [J].

Dai, JN ;

Liu, HH ;

Fang, WQ ;

Wang, L ;

Pu, Y ;

Jiang, FY .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 127 (2-3) :280-284

[49] High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates [J].

Young, N. G. ;

Farrell, R. M. ;

Hu, Y. L. ;

Terao, Y. ;

Iza, M. ;

Keller, S. ;

DenBaars, S. P. ;

Nakamura, S. ;

Speck, J. S. .

APPLIED PHYSICS LETTERS, 2013, 103 (17)

[50] Growth of InGaN thin films on polycrystalline metal-foil substrates and their photoluminescence properties [J].

Sato, Y ;

Hishinuma, T ;

Sato, S .

INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, :120-123

← 1 2 3 4 5 →