Selective growth of InGaAs/InP layers by gas source molecular beam epitaxy with atomic hydrogen irradiation

被引：0
|
作者：
机构：
[1] Kuroda, Naotaka
[2] Sugou, Shigeo
[3] Sasaki, Tatsuya
[4] Kitamura, Mitsuhiro
来源：
Kuroda, Naotaka | 1600年 / 32期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Deep trap in InGaAs grown by gas source molecular beam epitaxy
    Takanashi, Y
    Kondo, N
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) : 633 - 634
  • [42] GAS SOURCE MOLECULAR-BEAM EPITAXY OF INP, GAINAS AND GAINASP
    PANISH, MB
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1986, 12 (1-4): : 1 - 28
  • [43] InGaAsPBi grown on InP substrate by gas source molecular beam epitaxy
    Tian, Fangkun
    Ai, Likun
    Xu, Anhuai
    Huang, Hua
    Qi, Ming
    MATERIALS RESEARCH EXPRESS, 2021, 8 (02)
  • [44] SELECTIVE EMBEDDED GROWTH OF INGAAS/INP DOUBLE-HETEROSTRUCTURES BY CHEMICAL BEAM EPITAXY
    GOTODA, M
    ISU, T
    MARUNO, S
    NOMURA, Y
    JOURNAL OF CRYSTAL GROWTH, 1992, 125 (3-4) : 502 - 508
  • [45] INGAAS/INGAALAS MQW LASERS WITH INGAASP GUIDING LAYERS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
    KAWAMURA, Y
    WAKATSUKI, A
    NOGUCHI, Y
    IWAMURA, H
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (11) : 960 - 962
  • [46] CRITICAL THICKNESSES OF HIGHLY STRAINED INGAAS LAYERS GROWN ON INP BY MOLECULAR-BEAM EPITAXY
    GENDRY, M
    DROUOT, V
    SANTINELLI, C
    HOLLINGER, G
    APPLIED PHYSICS LETTERS, 1992, 60 (18) : 2249 - 2251
  • [47] Hydrogen incorporation into Si-doped InP deposited by gas-source molecular beam epitaxy
    J Appl Phys, 7 (3378):
  • [48] SELECTIVE GROWTH CONDITION IN DISILANE GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY
    HIRAYAMA, H
    TATSUMI, T
    AIZAKI, N
    APPLIED PHYSICS LETTERS, 1988, 52 (26) : 2242 - 2243
  • [49] THE GROWTH OF HIGH MOBILITY INGAAS AND INAIAS LAYERS BY MOLECULAR-BEAM EPITAXY
    LEE, W
    FONSTAD, CG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 536 - 538
  • [50] Fabrication of InGaAs wires by preferential molecular beam epitaxy growth on corrugated InP substrate
    Fujikura, Hajime
    Iwa-ana, Tadayoshi
    Hasegawa, Hideki
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (1 B): : 919 - 924
12345