Selective growth of InGaAs/InP layers by gas source molecular beam epitaxy with atomic hydrogen irradiation

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[1] Kuroda, Naotaka
[2] Sugou, Shigeo
[3] Sasaki, Tatsuya
[4] Kitamura, Mitsuhiro
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Kuroda, Naotaka | 1600年 / 32期
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