Photodiode properties of p-n-transitions Si〈Ge〉 with quantum dots

被引：0
|
作者：
Dvurechenskij, A.V. [1 ]
Ryazantsev, I.A. [1 ]
Kovchavtsev, A.P. [1 ]
Kuryshev, G.L. [1 ]
Nikiforov, A.I. [1 ]
Pchelyakov, O.P. [1 ]
机构：
[1] Inst. Fiziki Poluprovodnikov, SO, RAN, Novosibirsk, Russia
来源：
Avtometriya | 2002年 / 04期
关键词：
Interzonal transitions;
D O I：
暂无
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学科分类号：
摘要：
(Edited Abstract)
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页码：115 / 126
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