Electrical characteristics of Ta2O5 films on Si prepared by dc magnetron reactive sputtering and annealed rapidly in N2O

被引:0
|
作者
Eftekhari, G.
机构
来源
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena | 1998年 / 16卷 / 04期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Optical and electronic properties of CrOxNy films, deposited by reactive DC magnetron sputtering in Ar/N2/O2(N2O) atmospheres
    Mientus, R
    Grötschel, R
    Ellmer, K
    SURFACE & COATINGS TECHNOLOGY, 2005, 200 (1-4) : 341 - 345
  • [32] Optical properties of amorphous Ta2O5 thin films deposited by RF magnetron sputtering
    Chen, Xinyi
    Bai, Rui
    Huang, Meidong
    OPTICAL MATERIALS, 2019, 97
  • [33] Effect of Operated Pressure on Anticorrosive Behavior of Ta2O5 Thin Film Grown by DC Reactive Magnetron Sputtering System
    Khemasiri, Narathon
    Chananonnawathorn, Chanunthorn
    Horprathum, Mati
    Rayanasukha, Yossawat
    Phromyothin, Darinee
    Bunjongpru, Win
    Porntheeraphat, Supanit
    Nukeaw, Jiti
    ADVANCES IN MATERIAL SCIENCE AND TECHNOLOGY, 2013, 802 : 242 - +
  • [34] Improving electrical characteristics of Ta/Ta2O5/Ta capacitors using low-temperature inductively coupled N2O plasma annealing
    Tsai, Kou-Chiang
    Wu, Wen-Fa
    Chao, Chuen-Guang
    Wu, Chi-Chang
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (06) : H512 - H516
  • [35] INFLUENCE OF SIO2 AT THE TA2O5/SI INTERFACE ON DIELECTRIC CHARACTERISTICS OF TA2O5 CAPACITORS
    NISHIOKA, Y
    SHINRIKI, H
    MUKAI, K
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) : 2335 - 2338
  • [36] Electrical characteristics of Pt/SrBi2Ta2O9/Ta2O 5/Si using Ta2O5 as the buffer layer
    Choi, Hoon Sang
    Kim, Yong Tae
    Kim, Seong-Il
    Choi, In-Hoon
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (4 B): : 2940 - 2942
  • [37] Electrical characterization of Ta2O5 films deposited by laser reactive ablation of metallic Ta
    Fu, ZW
    Len, LY
    Qin, QZ
    THIN SOLID FILMS, 1999, 340 (1-2) : 164 - 168
  • [38] THE OPTICAL-PROPERTIES OF TA2O5 FILMS AND TA2O5/SIO2/AL2O3 MULTILAYER SYSTEMS PRODUCED BY RF REACTIVE SPUTTERING
    ZEMLICKA, J
    JASTRABIK, L
    ZELEZNY, V
    BOHAC, P
    MALINOVSKY, L
    PLASMA SURFACE ENGINEERING, VOLS 1 AND 2, 1989, : 1261 - 1266
  • [39] DIELECTRIC PROPERTIES OF FILMS PREPARED BY REACTIVE SPUTTERING OF TA IN O2-N2 MIXTURES
    INGREY, SJ
    WESTWOOD, WD
    MACLAURIN, BK
    THIN SOLID FILMS, 1975, 30 (02) : 377 - 381
  • [40] Electrical properties of thin Ta2O5 films obtained by thermal oxidation of Ta on Si
    Atanassova, E
    Spassov, D
    1997 21ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, VOLS 1 AND 2, 1997, : 613 - 616