Metal-dependent Schottky barrier height with the (NH4)2Sx-treated GaAs

被引：0
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作者：
Fan, Jia-Fa [1 ]
Oigawa, Haruhiro [1 ]
Nannichi, Yasuo [1 ]
机构：
[1] Univ of Tsukuba, Japan
来源：
| 1600年 / 27期
关键词：
Interface State Density Reduction - Schottky Barrier Height - Surface Treatment - Work Function;
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