共 50 条
- [1] 4-inch Fe-doped InP substrates manufactured using vertical boat technique 2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2003, : 542 - 543
- [2] Development of 6-inch Fe-doped InP single crystal by vertical boat method 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 2005, : 398 - 401
- [3] Development of 4-inch diameter InP single crystal with low dislocation density using VCZ method 1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 34 - 37
- [4] MOCVD GROWTH OF INP ON 4-INCH SI SUBSTRATE WITH GAAS INTERMEDIATE LAYER JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10): : L1587 - L1589
- [6] MOCVD GROWTH OF InP ON 4-INCH Si SUBSTRATE WITH GaAs INTERMEDIATE LAYER. Japanese Journal of Applied Physics, Part 2: Letters, 1987, 26 (10): : 1587 - 1589
- [7] Fabrication of Mesa-type InGaAs pin PDs with InP passivation structure on 4-inch diameter InP substrate 2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 2004, : 245 - 248
- [8] Improvement of microscopic and macroscopic uniformity in 4-inch InP substrate for IC application by Vertical Boat Growth GAAS IC SYMPOSIUM - 24TH ANNUAL, TECHNICAL DIGEST 2002, 2002, : 147 - 150
- [10] DEEP LEVELS IN FE-DOPED INP PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 52 (01): : 341 - 345