A comparative study of the electrical properties of 4H-SiC epilayers with continuous and dissociated micropipes

被引：0
|
作者：
机构：
[1] Kamata, I.
[2] Tsuchida, H.
[3] Jikimoto, T.
[4] Izumi, K.
来源：
| / Trans Tech Publications Ltd期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：389 / 393
相关论文
共 50 条
  • [31] Electrical properties of nanoscale Au contacts on 4H-SiC
    Han, Sang Youn
    Lee, Jong-Lam
    Pearton, S. J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (04): : 1870 - 1873
  • [32] Electrical Properties of Mg-Implanted 4H-SiC
    Matsuura, Hideharu
    Morine, Tatsuya
    Nagamachi, Shinji
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 685 - +
  • [33] Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers
    Klein, P. B.
    Myers-Ward, R.
    Lew, K. -K.
    VanMil, B. L.
    Eddy, C. R., Jr.
    Gaskill, D. K.
    Shrivastava, A.
    Sudarshan, T. S.
    SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 203 - +
  • [34] Structure of "star" defect in 4H-SiC substrates and epilayers
    Lee, J. W.
    Skowronski, M.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 403 - +
  • [35] Optical and Structural Properties of In-grown Stacking Faults in 4H-SiC Epilayers
    Hassan, J.
    Henry, A.
    Bergman, J. P.
    SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 307 - 310
  • [36] Impact of the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces on the Behavior of 4H-SiC MOSFETs
    Roccaforte, Fabrizio
    Fiorenza, Patrick
    Giannazzo, Filippo
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (08) : N3006 - N3011
  • [37] A study on electrical properties of Au/4H-SiC Schottky diode under illumination
    D. E. Yıldız
    S. Karadeniz
    H. H. Gullu
    Journal of Materials Science: Materials in Electronics, 2021, 32 : 20130 - 20138
  • [38] A study on electrical properties of Au/4H-SiC Schottky diode under illumination
    Yildiz, D. E.
    Karadeniz, S.
    Gullu, H. H.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2021, 32 (15) : 20130 - 20138
  • [39] Electrical and structural properties of AlGaN/GaN heterostructures grown onto 8°-off-axis 4H-SiC epilayers
    Roccaforte, Fabrizio
    Greco, Giuseppe
    Weng, Ming Hung
    Giannazzo, Filippo
    Raineri, Vito
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 808 - 811
  • [40] Electrical analysis and interface states evaluation of Ni Schottky diodes on 4H-SiC thick epilayers
    Porro, S
    Ciechonski, RR
    Syväjärvi, M
    Yakimova, R
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (13): : 2508 - 2514
12345