A comparative study of the electrical properties of 4H-SiC epilayers with continuous and dissociated micropipes

被引：0
|
作者：
机构：
[1] Kamata, I.
[2] Tsuchida, H.
[3] Jikimoto, T.
[4] Izumi, K.
来源：
| / Trans Tech Publications Ltd期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：389 / 393
相关论文
共 50 条
  • [21] Stacking faults in 4H-SiC epilayers and IGBTs
    Wang, Pin
    Cheng, Weiwei
    Li, Yifei
    Xu, Lei
    Hou, Pengxiang
    Yu, Le
    Li, Yun
    Li, Zheyang
    Jin, Rui
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 177
  • [22] Structure of carrot defects in 4H-SiC epilayers
    Zhang, X.
    Ha, S.
    Benamara, M.
    Skowronski, M.
    Sumakeris, J. J.
    Ryu, S.
    Paisley, M. J.
    O'Loughlin, M. J.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 327 - 332
  • [23] Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates
    Weimin Si
    Michael Dudley
    Hua Shuang Kong
    Joe Sumakeris
    Calvin Carter
    Journal of Electronic Materials, 1997, 26 : 151 - 159
  • [24] Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates
    Si, WM
    Dudley, M
    Kong, HS
    Sumakeris, J
    Carter, C
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) : 151 - 159
  • [25] Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers
    Miyano, Yutaro
    Asafuji, Ryosuke
    Yagi, Shuhei
    Hijikata, Yasuto
    Yaguchi, Hiroyuki
    AIP ADVANCES, 2015, 5 (12):
  • [26] Cathodoluminescence Study of 3C-SiC Epilayers Grown on 4H-SiC Substrates
    Jun Chen
    Hiroyuki Sazawa
    Wei Yi
    Takashi Sekiguchi
    Journal of Electronic Materials, 2023, 52 : 5075 - 5083
  • [27] Cathodoluminescence Study of 3C-SiC Epilayers Grown on 4H-SiC Substrates
    Chen, Jun
    Sazawa, Hiroyuki
    Yi, Wei
    Sekiguchi, Takashi
    JOURNAL OF ELECTRONIC MATERIALS, 2023, 52 (08) : 5075 - 5083
  • [28] Study on Evolution of Micropipes from Hexagonal Voids in 4H-SiC Crystals by Cathodoluminescence Imaging
    Arora, Aman
    Patel, Ankit
    Yadav, Brajesh S.
    Goyal, Anshu
    Thakur, Om P.
    Garg, Arun K.
    Raman, Ramachandran
    MICROSCOPY AND MICROANALYSIS, 2021, 27 (01) : 215 - 226
  • [29] Crystalline and Electrical Properties of BST/4H-SiC Capacitors
    Lee, Jae-Sang
    Jo, Yeong-Deuk
    Koh, Jung-Hyuk
    Ha, Jae-Geun
    Koo, Sang-Mo
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 57 (06) : 1889 - 1892
  • [30] Aluminum implantation in 4H-SiC: physical and electrical properties
    Michaud, J. F.
    Song, X.
    Biscarrat, J.
    Cayrel, F.
    Collard, E.
    Alquier, D.
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 581 - +
12345