共 50 条
- [1] A comparative study of the electrical properties of 4H-SiC epilayers with continuous and dissociated micropipes SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1137 - 1140
- [2] Improvement in electrical properties of 4H-SiC epilayers by micropipe dissociation Japanese Journal of Applied Physics, Part 2: Letters, 2001, 40 (10 A):
- [3] Improvement in electrical properties of 4H-SiC epilayers by micropipe dissociation JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (10A): : L1012 - L1014
- [4] Mapping of micropipes and downfalls on 4H-SiC epilayers by Candela optical surface analyzer 2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012), 2012, : 863 - 865
- [5] Growth and electrical characterization of 4H-SiC epilayers SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 35 - +
- [6] Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 437 - +
- [7] Effect of Helium implantation on gettering and electrical properties of 4H-SiC epilayers ION IMPLANTATION TECHNOLOGY 2010, 2010, 1321 : 249 - +
- [8] Analysis for structural defects in the 4H-SiC epilayers and their influence on electrical properties SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 1085 - 1088
- [9] Behavior of micropipes during growth in 4H-SiC SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 395 - 398
- [10] Electrical characterization of erbium-implanted 4H-SiC epilayers SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 459 - 462