BPSG improves CMP performance for deep submicron ICs

被引：0

作者：

Schaffer, W.J. ^{[1
]}

Fry, H.W. ^{[1
]}

机构：

[1] Watkins-Johnson Co, Scotts Valley, United States

来源：

Semiconductor International | 1996年 / 19卷 / 08期

关键词：

Annealing - Chemical vapor deposition - Dielectric materials - Glass transition - Integrated circuits - Polishing - Random access storage - Stresses - Temperature;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The chemical mechanical polishing (CMP) approach for BPSG film removal emphasizes the need for complete gap fill to prevent slurry penetration into underlying voids. Existing APCVD TEOS:O3 technology provides the necessary gap fill characteristics, but the CMP performance of these oxides is not widely known. This work investigated the normalized removal rate and within wafer nonuniformity (WIWNU) of BPSG over the useful composition range and determined the effect of dopant variations on the WIWNU. An experiment showed the removal rate can be varied by changing dopant concentrations to improve CMP tool throughput while not increasing wafer nonuniformity.

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