SPREAD OF PCM CARRIES LSI TO REGENERATIVE AMPLIFIERS.

被引：0

作者：

Berry, Tac

机构：

来源：

Electronics | 1980年 / 53卷 / 19期

关键词：

ELECTROOPTICAL DEVICES - SEMICONDUCTING FILMS;

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摘要：

A new techniue of molecular-beam epitaxy (MBE) is described that achieves epitaxial growth on a heated single-crystal substrate placed in an ultrahigh vacuum (UHV) through the reaction of multiple molecular beams of differing intensity and chemistry. Planar epitaxial structures of optoelectronic and microwave devices are possible applications of the MBE.

引用

页码：149 / 153

共 50 条

[1] SPREAD OF PCM CARRIES LSI TO REGENERATIVE AMPLIFIERS
BERRY, T
ELECTRONICS, 1980, 53 (19): : 149 - 153
[2] ESTIMATE OF THE SELECTIVITY OF REGENERATIVE AMPLIFIERS.
Khotuntsev, Yu.L.
Shakhno, O.F.
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[3] INTERFERENCE PROTECTION OF REGENERATIVE PARAMETRIC AMPLIFIERS.
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1600, (26-27):
[4] EFFECT OF A NON-IDEAL CIRCULATOR ON AMPLITUDE CHARACTERISTICS OF REGENERATIVE AMPLIFIERS.
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[5] ISOLATION AMPLIFIERS.
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[6] Review of Monolithic Operational Amplifiers. Fundamental Types of Operational Amplifiers.
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[7] MAGNETIC AMPLIFIERS.
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[8] Differential Amplifiers.
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[9] EXPERIMENTS WITH OPERATIONAL AMPLIFIERS.
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Wireless World, 1973, 79 (1455): : 447 - 448
[10] Frequency Response in Amplifiers.
Nowak, W.
1978, 28 (01): : 27 - 29

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