Quantitative analysis of elastic strains in GaAs/AlAs quantum dots

被引：0
|
作者：
Johannes Kepler Universitat, Linz, Austria [1 ]
机构：
来源：
Phys B Condens Matter | / 1-4卷 / 11-16期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Characterization of the morphology and optical properties of InAs/AlAs quantum dots with a GaAs insertion layer
    Roh, Cheong Hyun
    Song, Hong Joo
    Kim, Dong Ho
    Park, Joon Soo
    Choi, Yeon-Shik
    Kim, Hoon
    Hahn, Cheol-Koo
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (06)
  • [22] Microscopic interface phonon modes in structures of GaAs quantum dots embedded in AlAs shells
    Ren, SF
    Qin, G
    SOLID STATE COMMUNICATIONS, 2002, 121 (04) : 171 - 175
  • [23] Microdisk cavity laser with InGaAs quantum dots on AlAs/GaAs distributed Bragg reflector
    Hsing, J. Y.
    Tzeng, T. E.
    Kuo, M. Y.
    Lay, T. S.
    Shih, M. H.
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 622 - 626
  • [24] Shape transformation of self-assembled InAs quantum dots by overgrowth with GaAs and AlAs
    Schramm, A.
    Schaefer, J.
    Kipp, T.
    Heyn, Ch.
    Hansen, W.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 748 - 750
  • [25] Vibration spectrums of polar interface optical phonons in GaAs/AlAs cylindrical quantum dots
    Zhang, L
    COMMUNICATIONS IN THEORETICAL PHYSICS, 2005, 43 (02) : 333 - 336
  • [26] Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy
    Zhi, D
    Davock, H
    Murray, R
    Roberts, C
    Jones, TS
    Pashley, DW
    Goodhew, PJ
    Joyce, BA
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (04) : 2079 - 2083
  • [27] Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy
    1600, American Institute of Physics Inc. (89):
  • [28] Thermostabilization of electrical properties of InAs/GaAs self-assembled quantum dots embedded in GaAs/AlAs superlattices
    Chiquito, AJ
    Pusep, YA
    Mergulhao, S
    Galzerani, JC
    Moshegov, NT
    Miller, DL
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (3B): : 2006 - 2009
  • [29] MBE growth and magnetotunnelling transport properties of a single GaAs/AlAs/GaAs barrier incorporating InAs quantum dots
    Henini, M.
    Itskevich, I.E.
    Ihn, T.
    Moriarty, P.
    Nogaret, A.
    Beton, P.H.
    Eaves, L.
    Main, P.C.
    Middleton, J.R.
    Chauhan, J.S.
    Journal of Crystal Growth, 1997, 175-176 (pt 2) : 782 - 786
  • [30] MBE growth and magnetotunnelling transport properties of a single GaAs/AlAs/GaAs barrier incorporating InAs quantum dots
    Henini, M
    Itskevich, IE
    Ihn, T
    Moriarty, P
    Nogaret, A
    Beton, PH
    Eaves, L
    Main, PC
    Middleton, JR
    Chauhan, JS
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 782 - 786
12345