Anodic oxidation for quality control of buffer layers in GaAs epitaxial structures on semiinsulating substrates

被引:0
|
作者
机构
来源
Mikroelektron | / 4卷 / 287-290期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] CAPTURE OF HOT-ELECTRONS IN STRUCTURES FORMED BY DEPOSITION OF N-TYPE GAAS EPITAXIAL-FILMS ON SEMIINSULATING SUBSTRATES
    VOROBEV, YV
    KOSTYLEV, SA
    MAKAROVA, TV
    PROKHOROV, EF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (10): : 1116 - 1118
  • [22] MBE growth of high quality InAsSb thin films on GaAs substrates with GaSb as buffer layers
    Li, Yong
    Li, Xiaoming
    Hao, Ruiting
    Guo, Jie
    Wang, Yunpeng
    Aierken, Abuduwayiti
    Zhuang, Yu
    Chang, Faran
    Cui, Suning
    Gu, Kang
    Wei, Guoshuai
    Ma, Xiaole
    Wang, Guowei
    Xu, Yingqiang
    Niu, Zhichuan
    JOURNAL OF CRYSTAL GROWTH, 2020, 542
  • [23] GROWTH AND CHARACTERIZATION OF CDTE/ZNTE BUFFER LAYERS ON GAAS SUBSTRATES
    PARTHIER, L
    HOFFMANN, N
    TEUBNER, T
    ROSSMANN, H
    WILDE, L
    HENNEBERGER, F
    JACOBS, K
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 352 - 355
  • [24] THE EFFECT OF THIN BUFFER LAYERS ON GAAS HETEROEPITAXY ON SI SUBSTRATES
    ROSNER, SJ
    KOCH, SM
    HARRIS, JS
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 299 - 299
  • [25] Impact of crystallization manner of the buffer layer on the crystalline quality of GaN epitaxial layers on GaAs (111)A substrate
    Murakami, Hisashi
    Kawaguchi, Nobuhiko
    Kangawa, Yoshihiro
    Kumagai, Yoshinao
    Koukitu, Akinori
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E1149 - E1154
  • [26] A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrate
    Chang, EY
    Yang, TH
    Luo, GL
    Chang, CY
    JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (01) : 23 - 26
  • [27] GAAS EPITAXIAL LAYERS ON (100) N-GE SUBSTRATES
    KOSKIAHDE, ET
    DODELET, JP
    LOMBOS, BA
    LAWRENCE, MF
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1988, 195 : 77 - PHYS
  • [28] CHARACTERIZATION OF GAAS EPITAXIAL LAYERS ON SEMI-INSULATING SUBSTRATES
    BERGAMINI, P
    DONZELLI, GP
    GUARINI, G
    SVELTO, V
    ELETTROTECNICA, 1977, 64 (08): : 660 - 660
  • [29] A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrate
    Edward Y. Chang
    Tsung-Hsi Yang
    Guangli Luo
    Chun-Yen Chang
    Journal of Electronic Materials, 2005, 34 : 23 - 26
  • [30] THE GROWTH AND CHARACTERIZATION OF GE AND GAAS EPITAXIAL LAYERS ON SI SUBSTRATES
    AWAL, MA
    LEE, EH
    CHAN, EY
    SHENG, TT
    CELLER, GK
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 299 - 299