Effects of small amounts of silver added to NiGe ohmic contacts to n-type GaAs

被引：0
|
作者：
Wakimoto, Hiroki [1 ]
Oku, Takeo [1 ]
Koide, Yasuo [1 ]
Murakami, Masanori [1 ]
机构：
[1] Fuji Electric Corp, Nagano, Japan
来源：
| 1705年 / Electrochemical Soc Inc, Pennington, NJ, United States卷 / 143期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
18
引用
收藏
相关论文
共 50 条
  • [41] THE USE OF GENERALIZED MODELS TO EXPLAIN THE BEHAVIOR OF OHMIC CONTACTS TO N-TYPE GAAS
    MCNALLY, PJ
    SOLID-STATE ELECTRONICS, 1992, 35 (12) : 1705 - 1708
  • [42] Performance of Pd-Ge based ohmic contacts to n-type GaAs
    Ivey, DG
    Eicher, S
    Wingar, S
    Lester, T
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1997, 8 (02) : 63 - 68
  • [43] Performance of Pd-Ge based ohmic contacts to n-type GaAs
    Univ of Alberta, Edmonton, Canada
    J Mater Sci Mater Electron, 2 (63-68):
  • [44] THERMALLY STABLE OHMIC CONTACTS TO N-TYPE GAAS .7. ADDITION OF GE OR SI TO NIINW OHMIC CONTACTS
    MURAKAMI, M
    PRICE, WH
    NORCOTT, M
    HALLALI, PE
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) : 2468 - 2474
  • [45] MAKING OHMIC CONTACTS IN N-TYPE SILICON
    BOICHENKO, BL
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1964, (02) : 445 - +
  • [46] Si ohmic contacts on N-type SiC
    Cichon, Stanislav
    Machac, Petr
    Barda, Bohumil
    Kudrnova, Marie
    2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM), 2011,
  • [47] DEVELOPMENT OF THERMALLY STABLE INDIUM-BASED OHMIC CONTACTS TO N-TYPE GAAS
    MURAKAMI, M
    KIM, HJ
    PRICE, WH
    NORCOTT, M
    SHIH, YC
    CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 151 - 162
  • [48] Ohmic contacts to n-type GaSb grown on GaAs by the Interfacial Misfit Dislocation technique
    Rahimi, N.
    Aragon, A. A.
    Romero, O. S.
    Kim, D. M.
    Traynor, N. B. J.
    Rotter, T. J.
    Balakrishnan, G.
    Mukherjee, S. D.
    Lester, L. F.
    PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES II, 2013, 8620
  • [49] THERMALLY STABLE OHMIC CONTACTS TO N-TYPE GAAS .4. ROLE OF NI ON NILNW CONTACTS
    SHIH, YC
    MURAKAMI, M
    PRICE, WH
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (09) : 3539 - 3545
  • [50] MICROSTRUCTURE CHARACTERIZATION OF CU3GE N-TYPE GAAS OHMIC CONTACTS
    ABOELFOTOH, MO
    OKTYABRSKY, S
    NARAYAN, J
    WOODALL, JM
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (10) : 5760 - 5763
12345