Effect of annealing atmosphere on the delamination of Pt layer in SiO2/Pt/PZT/Pt ferroelectric capacitor

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Electronic Materials Lab., Material and Device Sector, Samsung Adv. Institute of Technology, P.O. Box 111, Suwon 440-600, Korea, Republic of [1 ]
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Integr Ferroelectr | / 1卷 / 331-340期
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