Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy

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Max-Planck Inst fur Metallforschung, Inst fur Physik, Stuttgart, Germany ^{[1
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来源：

J Cryst Growth | / 1-2卷 / 28-36期

关键词：

Annealing - Crystal defects - Dislocations (crystals) - Semiconducting aluminum compounds - Semiconducting gallium arsenide - Semiconducting silicon - Thermal cycling - Transmission electron microscopy;

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