FLUCTUATION-INDUCED GAP STATES IN AMORPHOUS HYDROGENATED SILICON.

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作者：
Chakraverty, B.K. [1 ]
机构：
[1] Lab d'Etudes des Proprietes, Electroniques des Solides, Grenoble,, Fr, Lab d'Etudes des Proprietes Electroniques des Solides, Grenoble, Fr
来源：
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1986年 / 53卷 / 02期
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摘要：
It is shown that in amorphous hydrogenated silicon, self-trapped localized electronic stages can occur in the bandgap due to intense local fluctuation of the hydrogen concentration. The trapping is determined by the mean hydrogen concentration of the system and by the strength of the electron interaction with the fluctuation potential. The fluctuation-induced gap states (FIGS) could be deep enough to trap one or two electrons, are metastable and are probably the cause of the Staebler-Wronski effect and numerous other light-induced effects observed in amorphous hydrogenated silicon.
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页码：147 / 157
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