Phosphorus doping in Si1-x-yGexCy epitaxial growth by low-pressure chemical vapor deposition using a SiH4-GeH4-CH3SiH3-PH 3-H2 gas system

被引：0

作者：

Lee, Doohwan ^{[1
]}

Noda, Takaaki ^{[1
,2
]}

Shim, Hyunyoung ^{[1
]}

Sakuraba, Masao ^{[1
]}

Matsuura, Takashi ^{[1
]}

Murota, Junichi ^{[1
]}

机构：

[1] Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

[2] Kokusai Electric Co., Ltd., Toyama Works, 2-1 Yasuuchi, Yatsuo-machi, Nei-gun, Toyama 939-2393, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 4 B期

关键词：

Hall mobility;

D O I：

10.1143/jjap.40.2697

中图分类号：

学科分类号：

摘要：

引用

页码：2697 / 2700

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