Phosphorus doping in Si1-x-yGexCy epitaxial growth by low-pressure chemical vapor deposition using a SiH4-GeH4-CH3SiH3-PH 3-H2 gas system

被引：0
|
作者：
Lee, Doohwan [1 ]
Noda, Takaaki [1 ,2 ]
Shim, Hyunyoung [1 ]
Sakuraba, Masao [1 ]
Matsuura, Takashi [1 ]
Murota, Junichi [1 ]
机构：
[1] Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
[2] Kokusai Electric Co., Ltd., Toyama Works, 2-1 Yasuuchi, Yatsuo-machi, Nei-gun, Toyama 939-2393, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 4 B期
关键词：
Hall mobility;
D O I：
10.1143/jjap.40.2697
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2697 / 2700
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