Tunneling current through ultra-thin silicon dioxide films formed by controlling preoxide in heating-up

被引：0

作者：

Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita ^{[1
]}

Osaka

565-0871, Japan

机构：

来源：

Ext. Abstr. Int. Workshop Gate Insulator, IWGI | / 110-113期

关键词：

Compendex;

D O I：

967556

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摘要：

Oxide semiconductors - Silica - Silicon oxides - MOS devices - Nanotechnology - Oxide films - Thermooxidation - Ultrathin films - Silicon on insulator technology - Gates (transistor) - Metals - MOSFET devices

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