Electrical characterization of Si/Si0.7Ge0.3 quantum well wires fabricated by low damage CF4 reactive ion etching

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IBM T.J. Watson Research Cent, Yorktown Heights, United States ^{[1
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Microelectron Eng | / 1-4卷 / 33-36期

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[21] Low-damage etching of poly-Si and SiO2 via a low-energy electron beam in inductively coupled CF4 plasma [J].

Jung, Jiwon ;

Kim, Jae-Hwi ;

Lim, Chang-Min ;

Choi, Jung-Eun ;

Bae, Junil ;

Kim, Hyung-Dong ;

Chung, Chin-Wook .

PLASMA SOURCES SCIENCE & TECHNOLOGY, 2024, 33 (10)

[22] Ga+ focused-ion-beam exposure and CF4 reactive-ion-etching development of Si3N4 resist optimized by Monte Carlo simulation [J].

Lee, HY ;

Chung, HB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03) :1161-1166

[23] Ga+ focused-ion-beam exposure and CF4 reactive-ion-etching development of Si3N4 resist optimized by Monte Carlo simulation [J].

Lee, Hyun-Yong ;

Chung, Hong-Bay .

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1998, 16 (03)

[24] Low-temperature amorphous boron nitride on Si0.7Ge0.3(001), Cu, and HOPG from sequential exposures of N2H4 and BCl3 [J].

Wolf, Steven ;

Edmonds, Mary ;

Sardashti, Kasra ;

Clemons, Max ;

Park, Jun Hong ;

Yoshida, Naomi ;

Dong, Lin ;

Nemani, Srinivas ;

Yieh, Ellie ;

Holmes, Russell ;

Alvarez, Daniel ;

Kummel, Andrew C. .

APPLIED SURFACE SCIENCE, 2018, 439 :689-696

[25] In-situ after-treatment using low-energy dry-etching with a CF4/O2 gas mixture to remove reactive ion etching damage [J].

Matsui, M ;

Uchida, F ;

Kojima, M ;

Tokunaga, T ;

Yamazaki, K ;

Katsuyama, K ;

Arai, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (4B) :2330-2336

[26] In-situ after-treatment using low-energy dry-etching with a CF4/O2 gas mixture to remove reactive ion etching damage [J].

Matsui, Miyako ;

Uchida, Fumihiko ;

Kojima, Masayuki ;

Tokunaga, Takafumi ;

Yamazaki, Kazuo ;

Katsuyama, Kiyomi ;

Arai, Hiromasa .

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (4 B) :2330-2336

[27] Reactive ion etching of Si-2 Sb-2 Te-5 in CF4/Ar plasma for a nonvolatile phase-change memory device [J].

Li Juntao ;

Liu Bo ;

Song Zhitang ;

Yao Dongning ;

Feng Gaoming ;

He Aodong ;

Peng Cheng ;

Feng Songlin .

JOURNAL OF SEMICONDUCTORS, 2013, 34 (05)

[28] STUDY OF REACTIVE ION ETCHING OF THE SI3N4/GAAS INTERFACE IN CF4 PLASMAS BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND X-RAY PHOTOELECTRON DIFFRACTION [J].

ALNOT, P ;

OLIVIER, J ;

WYCZISK, F ;

JOUBARD, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (08) :2361-2367

[29] ETCHING RATE CHARACTERIZATION OF SIO2 AND SI USING ION ENERGY FLUX AND ATOMIC FLUORINE DENSITY IN A CF4/O2/AR ELECTRON-CYCLOTRON-RESONANCE PLASMA [J].

DING, J ;

JENQ, JS ;

KIM, GH ;

MAYNARD, HL ;

HAMERS, JS ;

HERSHKOWITZ, N ;

TAYLOR, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04) :1283-1288

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