Admittance analysis of an MIS structure made with PECVD deposited a-SiNx:H thin films

被引：0
|
作者：
Department of Physics, M. East. Technical University, 06531, Ankara, Turkey [1 ]
机构：
来源：
J Non Cryst Solids | / 2-3卷 / 131-144期
关键词：
This work was carried out with the financial support of both the Turkish Scientific and Technical Research Council (TUBITAK – TBAG – Project No. 1538) and State Planning Organization (DPT – Project No. AFP-01-05DPT96 K 121560);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
40
引用
收藏
相关论文
共 50 条
  • [31] Thermally induced damages of PECVD SiNx thin films
    Liu, Yinong
    Jehanathan, Neerushana
    Dell, John
    JOURNAL OF MATERIALS RESEARCH, 2011, 26 (19) : 2552 - 2557
  • [32] Thermally induced damages of PECVD SiNx thin films
    Yinong Liu
    Neerushana Jehanathan
    John Dell
    Journal of Materials Research, 2011, 26 : 2552 - 2557
  • [33] Micro-Raman spectroscopy studies of as-deposited and furnace-annealed a-SiNx:H films
    Yue, Ruifeng
    Wang, Yan
    Han, Hexiang
    Liao, Xianbo
    Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology, 2000, 20 (04): : 238 - 242
  • [34] Electrical characterization of MIS devices using PECVD SiNx:H films for application of silicon solar cells
    Jin-Su Yoo
    Jun-Sik Cho
    Joo-Hyung Park
    Seung-Kyu Ahn
    Kee-Shik Shin
    Kyung-Hoon Yoon
    Junsin Yi
    Journal of the Korean Physical Society, 2012, 61 : 89 - 92
  • [35] Electrical characterization of MIS devices using PECVD SiNx:H films for application of silicon solar cells
    Yoo, Jin-Su
    Cho, Jun-Sik
    Park, Joo-Hyung
    Ahn, Seung-Kyu
    Shin, Kee-Shik
    Yoon, Kyung-Hoon
    Yi, Junsin
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 61 (01) : 89 - 92
  • [36] Reliability and electric properties for PECVD a-SiNx:H films with an optical bandgap ranging from 2.5 to 5.38 eV.
    van Delden, MHWM
    van der Wel, PJ
    41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2003, : 293 - 297
  • [37] Influence of deposition temperature on amorphous structure of PECVD deposited a-Si:H thin films
    Muellerova, Jarmila
    Fischer, Marinus
    Netrvalova, Marie
    Zeman, Miro
    Sutta, Pavel
    CENTRAL EUROPEAN JOURNAL OF PHYSICS, 2011, 9 (05): : 1301 - 1308
  • [38] A study on strong room temperature photoluminescence of a-SiNx:H films
    Wang, Y
    Yue, RF
    Li, GH
    Liao, XB
    Wang, YQ
    Diao, HW
    Kong, GL
    MATERIALS LETTERS, 2000, 44 (02) : 87 - 90
  • [39] a-SiNx:H Antireflective And Passivation Layer Deposited By Atmospheric Pressure Plasma
    Vallade, J.
    Pouliquen, S.
    Lecouvreur, P.
    Bazinette, R.
    Hernandez, E.
    Quoizola, S.
    Massines, F.
    PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2012), 2012, 27 : 365 - 371
  • [40] Narrow band photocurrent response from partially phase separated a-SiNx:H thin films
    Bommali, R. K.
    Ahmad, Shahab
    Sharma, Nandlal
    Srivastava, P.
    Prakash, G. Vijaya
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (11)
12345