Admittance analysis of an MIS structure made with PECVD deposited a-SiNx:H thin films

被引：0
|
作者：
Department of Physics, M. East. Technical University, 06531, Ankara, Turkey [1 ]
机构：
来源：
J Non Cryst Solids | / 2-3卷 / 131-144期
关键词：
This work was carried out with the financial support of both the Turkish Scientific and Technical Research Council (TUBITAK – TBAG – Project No. 1538) and State Planning Organization (DPT – Project No. AFP-01-05DPT96 K 121560);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
40
引用
收藏
相关论文
共 50 条
  • [1] Admittance analysis of an MIS structure made with PECVD deposited a-SiNx:H thin films
    Atilgan, I
    Özder, S
    Özdemir, O
    Katircioglu, B
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1999, 249 (2-3) : 131 - 144
  • [2] Fundamental properties of a-SiNx: H thin films deposited by ICP-PECVD for MEMS applications
    Dergez, D.
    Schalko, J.
    Bittner, A.
    Schmid, U.
    APPLIED SURFACE SCIENCE, 2013, 284 : 348 - 353
  • [3] Structural and Electrical Characterization of Nanostructured a-SiNx:H PECVD Films.
    Ribeiro, M.
    Abe, I. Y.
    Pereyra, I.
    MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2011, 2011, 39 (01): : 123 - 129
  • [4] Low-stress and long-term stable a-SiNx:H films deposited by ICP-PECVD
    Dergez, D.
    Bittner, A.
    Schalko, J.
    Schmid, U.
    28TH EUROPEAN CONFERENCE ON SOLID-STATE TRANSDUCERS (EUROSENSORS 2014), 2014, 87 : 100 - 103
  • [5] Abnormal frequency dispersion of the admittance associated with a chromium/plasma deposited a-SiNx:H/p-Si structure
    Oezdemir, Orhan
    Atilgan, Ismail
    Katircioglu, Bayram
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2007, 353 (29) : 2751 - 2757
  • [6] 1H NMR studies of PECVD a-SiNx:H
    He, Yihua
    Weng, Limin
    Xu, Chunfang
    Yang, Guang
    Wu, Xuewen
    International Conference on Solid-State and Integrated Circuit Technology Proceedings, 1998, : 304 - 306
  • [7] High rate deposition of a-SiNx:H by VHF PECVD
    Takagi, T
    Nakagawa, Y
    Watabe, Y
    Takechi, K
    Nishida, S
    AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 : 483 - 488
  • [8] 1H NMR studies of PECVD a-SiNx:H
    He, YH
    Weng, LM
    Xu, CF
    Yang, G
    Wu, XW
    1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 304 - 306
  • [9] Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD
    Lelièvre, J. -F.
    De la Torre, J.
    Kaminski, A.
    Bremond, G.
    Lemiti, M.
    El Bouayadi, Rachid
    Araujo, Daniel
    Epicier, Thierry
    Monna, R.
    Pirot, M.
    Ribeyron, P. -J.
    Jaussaud, C.
    THIN SOLID FILMS, 2006, 511 : 103 - 107
  • [10] Effects of hydrogen on photoluminescence properties of a-SiNx: H films prepared by VHF-PECVD
    Song, Chao
    Huang, Rui
    Wang, Xiang
    Guo, Yanqing
    Song, Jie
    Zhang, Yixiong
    Zheng, Zehao
    APPLIED SURFACE SCIENCE, 2011, 258 (04) : 1290 - 1293
12345