1. 3 mu m BURIED-HETEROSTRUCTURE LASERS ON P-TYPE InP SUBSTRATES.

被引：0
|
作者：
Nakano, Yoshinori [1 ]
Noguchi, Yoshio [1 ]
机构：
[1] NTT, Atsugi Electrical, Communications Lab, Atsugi, Jpn, NTT, Atsugi Electrical Communications Lab, Atsugi, Jpn
来源：
IEEE Journal of Quantum Electronics | 1985年 / QE-21卷 / 05期
关键词：
BURIED-HETEROSTRUCTURE LASERS - INDIUM PHOSPHIDE SUBSTRATE;
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摘要：
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页码：452 / 457
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