1. 3 mu m BURIED-HETEROSTRUCTURE LASERS ON P-TYPE InP SUBSTRATES.

被引：0

作者：

Nakano, Yoshinori ^{[1
]}

Noguchi, Yoshio ^{[1
]}

机构：

[1] NTT, Atsugi Electrical, Communications Lab, Atsugi, Jpn, NTT, Atsugi Electrical Communications Lab, Atsugi, Jpn

来源：

IEEE Journal of Quantum Electronics | 1985年 / QE-21卷 / 05期

关键词：

BURIED-HETEROSTRUCTURE LASERS - INDIUM PHOSPHIDE SUBSTRATE;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：452 / 457

共 50 条

[31] DYNAMIC SPECTRAL WIDTH OF RAPIDLY MODULATED 1.58 MU-M GALNASP/INP BURIED-HETEROSTRUCTURE DISTRIBUTED-BRAGG-REFLECTOR INTEGRATED-TWIN-GUIDE LASERS
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[37] MECHANISM OF CATASTROPHIC DEGRADATION IN 1.3-MU-M V-GROOVED SUBSTRATE BURIED-HETEROSTRUCTURE LASERS WITH THE APPLICATION OF LARGE PULSED CURRENTS
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