1. 3 mu m BURIED-HETEROSTRUCTURE LASERS ON P-TYPE InP SUBSTRATES.

被引：0

作者：

Nakano, Yoshinori ^{[1
]}

Noguchi, Yoshio ^{[1
]}

机构：

[1] NTT, Atsugi Electrical, Communications Lab, Atsugi, Jpn, NTT, Atsugi Electrical Communications Lab, Atsugi, Jpn

来源：

IEEE Journal of Quantum Electronics | 1985年 / QE-21卷 / 05期

关键词：

BURIED-HETEROSTRUCTURE LASERS - INDIUM PHOSPHIDE SUBSTRATE;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：452 / 457

共 50 条

[21] HIGH-POWER SLM OPERATION OF 1.3-MU-M INP/INGAASP DFB LD WITH DOUBLY BURIED HETEROSTRUCTURE ON P-TYPE INP SUBSTRATE
SUZUKI, Y
NAGAI, H
NOGUCHI, Y
MATSUOKA, T
KURUMADA, K
ELECTRONICS LETTERS, 1984, 20 (21) : 881 - 882
[22] SEMICONDUCTOR-LASERS - BURIED-HETEROSTRUCTURE LASERS AT 0.98 MU-M OUTPERFORM RIDGE-WAVE-GUIDE DEVICES
JUNGBLUTH, ED
LASER FOCUS WORLD, 1993, 29 (04): : 33 - &
[23] Low-threshold InGaAsP/InP 1&middot3 μm doubly buried-heterostructure lasers with a reactive-ion-etched facet
Saito, H.
Noguchi, Y.
Nagai, H.
Electronics Letters, 1986, 22 (01): : 36 - 38
[24] 1.3 MU-M INGAASP/INP DISTRIBUTED-FEEDBACK P-SUBSTRATE PARTIALLY INVERTED BURIED-HETEROSTRUCTURE LASER DIODE
TAKEMOTO, A
SAKAKIBARA, Y
NAKAJIMA, Y
FUJIWARA, M
KAKIMOTO, S
NAMIZAKI, H
SUSAKI, W
ELECTRONICS LETTERS, 1987, 23 (11) : 546 - 547
[25] 1.3-MU-M INP/INGAASP CHANNELED-SUBSTRATE BURIED-HETEROSTRUCTURE LASER MONOLITHICALLY INTEGRATED WITH A PHOTODETECTOR
KOSZI, LA
CHIN, AK
SEGNER, BP
SHEN, TM
DUTTA, NK
ELECTRONICS LETTERS, 1985, 21 (25-2) : 1209 - 1210
[26] Ruthenium-doped InP buried 1.3-μm DFB lasers on a P-type substrate
Iga, R
Kondo, Y
Kishi, K
Saitoh, T
2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 2004, : 742 - 745
[27] INP/INGAASP P-TYPE SUBSTRATE AND MASS TRANSPORTED DOUBLY BURIED HETEROSTRUCTURE LASER
NOGUCHI, Y
SUZUKI, Y
MATSUOKA, T
NAGAI, H
ELECTRONICS LETTERS, 1984, 20 (19) : 769 - 771
[28] Submilliamp threshold 1.3 mu m strained MQW lasers with novel p-substrate buried-heterostructure grown by MOVPE using TBA and TBP
Terakado, T
Tsuruoka, K
Ishida, T
Nakamura, T
Fukushima, K
Ae, S
Uda, A
Torikai, T
Uji, T
ELECTRONICS LETTERS, 1995, 31 (25) : 2182 - 2184
[29] LOW-THRESHOLD 1.55-MU-M INGAASP/INP BURIED HETEROSTRUCTURE DISTRIBUTED FEEDBACK LASERS
CHINEN, K
GENEI, K
SUHARA, H
TANAKA, A
MATSUYAMA, T
KONNO, K
MUTO, Y
APPLIED PHYSICS LETTERS, 1987, 51 (04) : 273 - 275
[30] ACCELERATED AGING CHARACTERISTICS OF INGAASP-INP BURIED HETEROSTRUCTURE LASERS EMITTING AT 1.3 MU-M
MIZUISHI, K
HIRAO, M
TSUJI, S
SATO, H
NAKAMURA, M
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L429 - L432

← 1 2 3 4 5 →