Transparent conductive tin oxide films by photochemical vapour deposition

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作者：

Osaka National Research Institute, AIST, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan ^{[1
]}

不详 ^{[2
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不详 ^{[3
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不详 ^{[4
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来源：

Thin Solid Films | / 142-144期

关键词：

Chemical vapor deposition - Electric conductivity of solids - Film growth - Film preparation - Substrates - Tin compounds;

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摘要：

Photochemical vapour deposition (photo-CVD) is expected to be a damage-free process at low temperature. Transparent conductive tin oxide (non-doped) films have been prepared by the photo-CVD process under various deposition conditions. TMT (Sn (CH3)4) and O2 (containing 4 mol.% O3) were used as the raw materials and a low-pressure mercury lamp was used as the light source. By the combination of linearly focused low-pressure mercury lamp light through a semi-cylindrical suprasil window and a reciprocation motion of the substrate, a good uniformity of the film thickness along an 8×10 cm area was realized. The growth rate was proportional to both the substrate temperature and the TMT flow rate. The minimum resistivity of approximately 7×10-3 Ω cm was obtained at a substrate temperature of 250 °C.

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