Strain relaxation correlated with the transport properties of AIN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy

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[1] Jeganathan, Kulandaivel
[2] Ide, Toshihide
[3] Shimizu, Mitsuaki
[4] Okumura, Hajime
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Jeganathan, K. (k.jeganathan@aist.go.jp) | 1600年 / American Institute of Physics Inc.卷 / 93期
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